Datasheet > BC858BWG

BC858BWG

更新时间： 2024-01-25 15:26:47

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
5页	1066K
描述
PNP Silicon Epitaxial Planar Transistor

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BC858BWG 数据手册

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

FEATURES

Lead-free



For AF input stages and driver applications.

High current gain.

Low collector-emitter saturation voltage.

Low noise between 30Hz and 15 kHz.

Complementary types:BC846W,BC847W,BC848W.

APPLICATIONS



General purpose switching and amplification application.

SOT-323

ORDERING INFORMATION

Type No.

Marking

Package Code

BC856AW□/BC856BW□

BC857AW□/BC857BW□/BC857CW□

BC858AW□/BC858BW□/BC858CW□

3A/3B

3E/3F/3G

3J/3K/3L

SOT-323

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

BC856W

BC857W

BC858W

BC856W

BC857W

BC858W

-80

-50

-30

-65

-45

-30

V_CBO

Collector-Emitter Voltage

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

Peak Collector current

Peak Base current

-5

-100

℃

I_CM

-200

I_BM

-200

P_C

Collector Dissipation

200

T_j,T_stg

Junction and Storage Temperature

-65 to +150

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Revision:20170701-P1

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