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BC858C

更新时间: 2024-02-27 11:24:55
品牌 Logo 应用领域
SECOS 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 259K
描述
BC856A

BC858C 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.59Is Samacsys:N
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):125JESD-609代码:e3
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC858C 数据手册

 浏览型号BC858C的Datasheet PDF文件第2页浏览型号BC858C的Datasheet PDF文件第3页 
BC856A, B  
BC857A, B, C  
BC858A, B, C  
Elektronische Bauelemente  
A suffix of "-C" specifies halogen & lead-free  
FEATURES  
SOT-23  
Min  
n
n
n
n
A
L
General Purpose Transistor PNP Type  
Collect current : - 0.1A  
Dim  
A
Max  
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
O
O
Operating Temp. : -55 C ~ +150 C  
B
3
S
C
Top View  
B
RoHS compliant product  
C
1
2
D
V
G
G
H
COLLE CTOR  
3
3
J
1
K
1
H
J
D
BAS E  
K
L
2
S
V
2
E MITTE R  
All Dimension in mm  
ELECTRICAL CHARACTERISTICS˄Tamb=25ć  
unless otherwise specified˅  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
Collector-base breakdown voltage  
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
-80  
-50  
-30  
-65  
-45  
-30  
VCBO  
V
Ic= -10­Aˈ IE=0  
Collector-emitter breakdown voltage  
VCEO  
VEBO  
ICBO  
Ic= -10 mAˈ IB=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
-5  
IE= -10 ­Aˈ IC=0  
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
VCB= -70 V , IE=0  
VCB= -45 V , IE=0  
-0.1  
­A  
VCB= -25 V , IE=0  
VCE= -60 V , IB=0  
VCE= -40 V , IB=0  
VCE= -25 V , IB=0  
Collector cut-off current  
ICEO  
IEBO  
HFE  
-0.1  
-0.1  
­A  
­A  
Emitter cut-off current  
VEB= -5 V ,  
IC=0  
DC current gain  
BC856A,857A,858A  
BC856B,857B,858B  
BC857C,BC858C  
125  
220  
420  
250  
475  
800  
VCE= -5V, IC= -2mA  
˄
1
˅
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat)  
BE(sat)  
IC=-100mA, IB= -5 mA  
-0.5  
-1.1  
V
V
V
IC= -100 mA, IB= -5mA  
VCE= -5 V, IC= -10mA  
Transition frequency  
100  
MHz  
fT  
f=100MHz  
DEVICE MARKING  
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev. B  
Page 1 of 3  

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