Datasheet > BC858BW-G

BC858BW-G

更新时间： 2024-02-15 01:34:44

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描述
Small Signal Transistor

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中文翻译

获取价格

数据手册

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BC858BW-G 数据手册

Small Signal Transistor

BC856AW-G Thru. BC858CW-G (PNP)

RoHS Device

Features

-Ideally suited for automatic insertion

-For Switching and AF Amplifier Applications

-Power dissipation

SOT-323

PCM: 0.15W (@TA=25°C)

-Collector current

0.087 (2.20)

0.079 (2.00)

ICM: -0.1A

-Collector-base voltage

0.053(1.35)

0.045(1.15)

VCBO: BC856W= -80V

BC857W= -50V

BC858W= -30V

-Operating and storage junction temperature

range: TJ, TSTG= -65 to +150°C

0.006 (0.15)

0.003 (0.08)

0.055 (1.40)

0.047 (1.20)

0.096 (2.45)

0.085 (2.15)

0.039 (1.00)

0.035 (0.90)

Mechanical data

0.004 (0.10) max

-Case: SOT-323, molded plastic.

0.016 (0.40)

0.008 (0.20)

-Terminals: solderable per MIL-STD-750,

method 2026.

0.018 (0.46)

0.010 (0.26)

Circuit diagram

Dimensions in inches and (millimeter)

-1.BASE

-2.EMITTER

-3.COLLECTOR

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Units

-80

-50

-30

BC856W-G

BC857W-G

BC858W-G

Collector-Base Voltage

VCBO

VCEO

-65

-45

-30

BC856W-G

BC857W-G

BC858W-G

Collector-Emitter Voltage

Emitter-Base Voltage

VEBO

-5

-0.1

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

150

^OC

150

^OC

Storage Temperature Range

TSTG

-65 to +150

REV:B

Company reserves the right to improve product design , functions and reliability without notice.

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Comchip Technology CO., LTD.

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