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BC858C PDF预览

BC858C

更新时间: 2024-11-10 17:00:23
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 476K
描述
30V,0.1A,General Purpose PNP Bipolar Transistor

BC858C 数据手册

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PNP Small Signal Surface Mount Transistor  
BC856-BC858  
Features  
Low current  
Low voltage  
Mechanical Data  
Case: SOT-23  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-23  
Ordering Information  
Part Number  
BC856A/B  
Package  
SOT-23  
SOT-23  
SOT-23  
Shipping Quantity  
3000 pcs / Tape & Reel  
3000 pcs / Tape & Reel  
3000 pcs / Tape & Reel  
Marking Code  
3A/3B  
BC857A/B/C  
BC858A/B/C  
3E/3F/3G  
3J/3K/3L  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
BC856  
-80  
BC857  
-50  
BC858  
Unit  
V
-30  
-30  
-5  
-65  
-45  
V
-5  
-5  
V
Collector Current (Continuous)  
Collector Current (Peak)  
-100  
-200  
mA  
mA  
ICM  
Thermal Characteristics  
Parameter  
Power Dissipation ( TA = 25°C )  
Symbol  
PD  
Value  
250  
Unit  
mW  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Case *1  
Thermal Resistance Junction-to-Lead *1  
Operating Junction Temperature  
Storage Temperature Range  
RθJA  
RθJC  
RθJL  
TJ  
409  
225  
197  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B  
STM0084A: April 2023 [2.2]  
www.gmesemi.com  
1

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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon