BC857BS
■
Maximum Ratings (Ta=25℃Unless otherwise specified)
Q1&Q2-PNP
Item
Symbol
VCBO
VCEO
VEBO
IC
Unit
V
Conditions
IC=-10μA,IE=0
Value
-50
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
IC =-10mA,IB=0
IE=-10μA,IC=0
-45
V
-5
mA
mW
℃
-100
Total Device Dissipation
Junction Temperature
Storage Temperature
PC
300
Tj
-55 to +150
-55 to +150
TSTG
℃
■
Electrical Characteristics (Ta=25℃unless otherwise specified)
Q1&Q2-PNP
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Unit
V
Conditions
IC=-10μA,IE=0
Min
-50
-45
-5
TYP
Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
IC =-10mA,IB=0
V
IE=-10μA,IC=0
nA
VCB=-30V,IB=0
-15
475
DC current gain
hFE
VCE=-5V,IC=-2mA
IC=-10mA,IB=-0.5mA
IC=-100mA,IB=-5mA
VCE=-5V,IC=-2mA
VCE=-5V,IC=-10mA
VCE=-5V,IC=-10mA,f=100MHz
220
-0.6
Collector-emitter saturation voltage
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
V
V
-0.3
-0.65
-0.75
-0.82
Base-emitter Voltage
Transition frequency
VBE
Ft
V
MHz
200
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs) QUANTITY(pcs)
INNER BOX
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
UNIT WEIGHT(g)
DELIVERY MODE
CODE
BC857BS
F2
Approximate 0.009g
3000
30000
120000
7” reel
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S2532
Rev.1.2,03-Jan-21
www.21yangjie.com