是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.01 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 420 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.6 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC850C-215 | NXP |
获取价格 |
NPN general purpose transistors | |
BC850-C-AE3-R | UTC |
获取价格 |
SWITCHING AND AMPLIFIER APPLICATION | |
BC850-C-AL3-R | UTC |
获取价格 |
SWITCHING AND AMPLIFIER APPLICATION | |
BC850C-AU | PANJIT |
获取价格 |
SOT-23 | |
BC850CBK | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
BC850CBKLEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
BC850CD87Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
BC850CE6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
BC850CE6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | |
BC850CE6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon |