Datasheet > BC846BD87Z

BC846BD87Z

更新时间： 2024-11-26 03:57:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	83K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon

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BC846BD87Z 数据手册

BC846A

BC846B

BC847A

BC847B

BC847C

SOT-23

Mark: 1A. / 1B.

SOT-23

Mark: 1E. / 1F. / 1G.

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1.0 µA to 50 mA.

Sourced from Process 07.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

Collector-Emitter Voltage

Collector-Base Voltage

6.0

BC846 series

BC847 series

BC846 series

BC847 series

V_CES

V_EBO

I_C

Emitter-Base Voltage

Collector Current - Continuous

100

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BC846 / BC847

P_D

Total Device Dissipation

Derate above 25 C

325

2.8

mW/ C

Thermal Resistance, Junction to Ambient

357

R_θ

C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

12 3 4 5 6

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