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BC846BDW1T1

更新时间： 2024-09-14 22:39:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 110K
描述
Dual General Purpose Transistors

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中文翻译

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BC846BDW1T1 数据手册

 浏览型号BC846BDW1T1的Datasheet PDF文件第2页浏览型号BC846BDW1T1的Datasheet PDF文件第3页浏览型号BC846BDW1T1的Datasheet PDF文件第4页浏览型号BC846BDW1T1的Datasheet PDF文件第5页浏览型号BC846BDW1T1的Datasheet PDF文件第6页 
BC846BDW1T1,  
BC847BDW1T1,  
BC848CDW1T1  
Dual General Purpose  
Transistors  
http://onsemi.com  
NPN Duals  
(3)  
(2)  
(1)  
Q
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT−363/SC−88 which is  
designed for low power surface mount applications.  
Q
1
2
• Device Marking:  
BC846BDW1T1 = 1B  
BC847BDW1T1 = 1F  
BC848CDW1T1 = 1L  
(4)  
(5)  
(6)  
Features  
DIAGRAM  
MARKING  
• Pb−Free Package is Available  
SOT−363  
CASE 419B  
STYLE 1  
6
1xm  
MAXIMUM RATINGS  
1
Rating  
Symbol BC846 BC847 BC848 Unit  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
V
V
65  
80  
45  
50  
30  
30  
V
V
CEO  
CBO  
EBO  
1x = Specific Device Code  
= B, F, L  
m = Date Code  
x
6.0  
100  
6.0  
100  
5.0  
100  
V
Collector Current −  
Continuous  
I
C
mAdc  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
†
Device  
Package  
SOT−363  
SOT−363  
Shipping  
BC846BDW1T1  
BC847BDW1T1  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
THERMAL CHARACTERISTICS  
BC847BDW1T1G SOT−363  
(Pb−Free)  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
Per Device  
P
D
380  
250  
mW  
BC848CDW1T1  
SOT−363  
3000 Units/Reel  
FR−5 Board (Note 1)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
T = 25°C  
A
Derate Above 25°C  
3.0  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
328  
q
JA  
Junction and Storage  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 3  
BC846BDW1T1/D  
 
123456

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BC846BDW1T1 替代型号

型号 品牌 替代类型 描述 数据表
BC846BDW1T1G ONSEMI

完全替代

 Dual General Purpose Transistors

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