5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> BC846BDW1T1
BC846BDW1T1 PDF预览

BC846BDW1T1

更新时间： 2024-11-24 22:39:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 110K
描述
Dual General Purpose Transistors

阅读下载

中文翻译

获取价格

BC846BDW1T1 数据手册

 浏览型号BC846BDW1T1的Datasheet PDF文件第2页浏览型号BC846BDW1T1的Datasheet PDF文件第3页浏览型号BC846BDW1T1的Datasheet PDF文件第4页浏览型号BC846BDW1T1的Datasheet PDF文件第5页浏览型号BC846BDW1T1的Datasheet PDF文件第6页 
BC846BDW1T1,  
BC847BDW1T1,  
BC848CDW1T1  
Dual General Purpose  
Transistors  
http://onsemi.com  
NPN Duals  
(3)  
(2)  
(1)  
Q
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT−363/SC−88 which is  
designed for low power surface mount applications.  
Q
1
2
• Device Marking:  
BC846BDW1T1 = 1B  
BC847BDW1T1 = 1F  
BC848CDW1T1 = 1L  
(4)  
(5)  
(6)  
Features  
DIAGRAM  
MARKING  
• Pb−Free Package is Available  
SOT−363  
CASE 419B  
STYLE 1  
6
1xm  
MAXIMUM RATINGS  
1
Rating  
Symbol BC846 BC847 BC848 Unit  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
V
V
65  
80  
45  
50  
30  
30  
V
V
CEO  
CBO  
EBO  
1x = Specific Device Code  
= B, F, L  
m = Date Code  
x
6.0  
100  
6.0  
100  
5.0  
100  
V
Collector Current −  
Continuous  
I
C
mAdc  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
†
Device  
Package  
SOT−363  
SOT−363  
Shipping  
BC846BDW1T1  
BC847BDW1T1  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
THERMAL CHARACTERISTICS  
BC847BDW1T1G SOT−363  
(Pb−Free)  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
Per Device  
P
D
380  
250  
mW  
BC848CDW1T1  
SOT−363  
3000 Units/Reel  
FR−5 Board (Note 1)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
T = 25°C  
A
Derate Above 25°C  
3.0  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
328  
q
JA  
Junction and Storage  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 3  
BC846BDW1T1/D  
 
123456

中文翻译

下载PDF

BC846BDW1T1 替代型号

型号 品牌 替代类型 描述 数据表
BC846BDW1T1G ONSEMI

完全替代

 Dual General Purpose Transistors

与BC846BDW1T1相关器件

型号 品牌 获取价格 描述 数据表
BC846BDW1T1/D ETC

获取价格

 		Dual General Purpose Transistors
BC846BDW1T1D ONSEMI

获取价格

 		Dual General Purpose Transistors
BC846BDW1T1G ONSEMI

获取价格

 		Dual General Purpose Transistors
BC846BDW-G WEITRON

获取价格

 		Transistor
BC846BE6327 INFINEON

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon,
BC846BE6327HTSA1 INFINEON

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
BC846BE6433 INFINEON

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
BC846BE6433HTMA1 INFINEON

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
BC846BE6767 INFINEON

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon,
BC846BF NXP

获取价格

 		NPN general purpose transistors

与BC846BDW1T1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证