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BC807

更新时间: 2024-11-18 06:41:39
品牌 Logo 应用领域
商升特 - SEMTECH 晶体晶体管
页数 文件大小 规格书
2页 184K
描述
PNP Silicon Epitaxial Planar Transistors

BC807 数据手册

 浏览型号BC807的Datasheet PDF文件第2页 
BC807 / BC808  
PNP Silicon Epitaxial Planar Transistors  
for switching, AF driver and amplifier applications  
These transistors are subdivided into three groups  
-16, -25 and -40, according to their current gain.  
As complementary types the NPN transistors BC817  
and BC818 are recommended.  
SOT-23 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
-VCBO  
Value  
Unit  
BC807  
BC808  
BC807  
BC808  
50  
30  
45  
25  
Collector Base Voltage  
Collector Emitter Voltage  
V
V
-VCEO  
Emitter Base Voltage  
-VEBO  
-IC  
5
500  
V
Collector Current  
mA  
mW  
K/W  
Power Dissipation  
Ptot  
RθJA  
TJ  
200  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
500  
O
C
150  
O
C
Storage Temperature Range  
TS  
- 55 to + 150  
O
Electrical Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at -VCE = 1 V, -IC = 100 mA  
Current Gain Group  
-16  
-25  
-40  
hFE  
hFE  
hFE  
hFE  
100  
160  
250  
40  
-
-
-
-
250  
400  
600  
-
-
-
-
-
at -VCE = 1 V, -IC = 500 mA  
Collector Base Cutoff Current  
at -VCB = 20 V  
Emitter-Base Cutoff Current  
at -VEB = 5 V  
Collector Saturation Voltage  
at -IC = 500 mA, -IB = 50 mA  
Base-Emitter Voltage  
at -IC = 500 mA, -VCE = 1 V  
Gain -Bandwidth Product  
at -VCE = 5 V, -IC = 10 mA, f = 50 MHz  
Collector-Base Capacitance  
at -VCB = 10 V, f = 1 MHz  
-ICBO  
-IEBO  
-
-
-
-
100  
100  
0.7  
1.2  
-
nA  
nA  
V
-VCEsat  
-VBE(on)  
fT  
-
-
-
-
V
80  
-
-
MHz  
pF  
CCBO  
9
-
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 19/12/2006  

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