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BC556ZL1 PDF预览

BC556ZL1

更新时间: 2024-09-10 20:57:47
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
7页 77K
描述
100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

BC556ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.67其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):280 MHzBase Number Matches:1

BC556ZL1 数据手册

 浏览型号BC556ZL1的Datasheet PDF文件第2页浏览型号BC556ZL1的Datasheet PDF文件第3页浏览型号BC556ZL1的Datasheet PDF文件第4页浏览型号BC556ZL1的Datasheet PDF文件第5页浏览型号BC556ZL1的Datasheet PDF文件第6页浏览型号BC556ZL1的Datasheet PDF文件第7页 
BC556B, BC557A, B, C,  
BC558B  
Amplifier Transistors  
PNP Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
COLLECTOR  
1
MAXIMUM RATINGS  
2
BASE  
Rating  
Symbol  
Value  
Unit  
Collector - Emitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
3
BC556  
BC557  
BC558  
−65  
−45  
−30  
EMITTER  
Collector - Base Voltage  
Emitter - Base Voltage  
Vdc  
BC556  
BC557  
BC558  
−80  
−50  
−30  
TO−92  
CASE 29  
STYLE 17  
−5.0  
Vdc  
Collector Current − Continuous  
Collector Current − Peak  
I
C
−100  
−200  
mAdc  
I
I
CM  
1
1
2
2
Base Current − Peak  
−200  
mAdc  
BM  
3
3
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Total Device Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
D
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
MARKING DIAGRAM  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
BC  
55xx  
AYWW G  
G
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
83.3  
q
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
xx  
A
Y
= 6B, 7A, 7B, 7C, or 8B  
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 3  
BC556B/D  

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