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BC557

更新时间: 2024-09-11 14:52:11
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
4页 1174K
描述
双极型晶体管

BC557 技术参数

极性:PNPCollector-emitter breakdown voltage:45
Collector Current - Continuous:0.1DC current gain - Min:120
DC current gain - Max:800Transition frequency:150
Package:TO-92Storage Temperature Range:-55-150
class:Transistors

BC557 数据手册

 浏览型号BC557的Datasheet PDF文件第2页浏览型号BC557的Datasheet PDF文件第3页浏览型号BC557的Datasheet PDF文件第4页 
BC556/557/558(PNP)  
TO-92 Bipolar Transistors  
COLLECTOR  
1.  
TO-92  
2. BASE  
3.  
EMITTER  
Features  
High Voltage  
Complement to BC546/BC547/BC548  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
BC556  
BC557  
BC558  
-80  
-50  
-30  
-65  
VCBO  
V
-45  
-30  
V
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VEBO  
IC  
-5  
-100  
625  
V
mA  
mW  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Dimensions in inches and (millimeters)  
PC  
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN TYP MAX UNIT  
Collector-base breakdown voltage  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
-80  
VCBO  
IC= -100μA, IE=0  
-50  
-30  
-65  
-45  
-30  
V
Collector-emitter breakdown voltage  
VCEO  
VEBO  
ICBO  
IC= -2mA , IB=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
IE= -100μA, IC=0  
-5  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
BC557A  
VCB=- 70 V, IE=0  
V
V
CB= -45 V, IE=0  
CB= -25V, IE=0  
-0.1  
-0.1  
-0.1  
μA  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
VCE= -60 V, IB=0  
ICEO  
V
V
CE= -40 V, IB=0  
CE= -25 V, IB=0  
μA  
μA  
IEBO  
VEB= -5 V, IC=0  
120  
120  
120  
120  
180  
420  
800  
800  
800  
220  
460  
800  
hFE  
VCE=-5V, IC= -2mA  
BC556B/BC557B/BC558B  
BC557C  
Collector-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
IC=-100mA, IB= -5mA  
IC= -100mA, IB=-5mA  
-0.65  
-1  
V
V
Base-emitter saturation voltage  
Transition frequency  
VCE= -5V, IC= -10mA  
f T  
150  
MHz  
f = 100MHz  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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