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BC557A PDF预览

BC557A

更新时间: 2024-11-03 22:48:15
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页数 文件大小 规格书
3页 61K
描述
PNP SILICON PLANAR EPITAXIAL TRANSISTORS

BC557A 数据手册

 浏览型号BC557A的Datasheet PDF文件第2页浏览型号BC557A的Datasheet PDF文件第3页 
PNP SILICON PLANAR EPITAXIAL TRANSISTORS  
BC 556, A, B  
BC 557, 8, A, B, C  
TO-92  
Boca Semiconductor Corp.  
BSC  
EBC  
http://www.bocasemi.com  
APPLICATION  
PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio  
Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing  
Circuits of Television Receivers.  
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)  
DESCRIPTION  
SYMBOL  
VCEO  
VCES  
VCBO  
VEBO  
IC  
BC556  
65  
BC558  
30  
30  
UNITS  
BC557  
45  
50  
50  
5.0  
Collector -Emitter Voltage  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter -Base Voltage  
Collector Current Continuous  
V
V
V
V
mA  
80  
80  
30  
100  
Peak  
ICM  
200  
mA  
Base Current -Peak  
IBM  
200  
mA  
Emitter Current- Peak  
IEM  
200  
mA  
Power Dissipation@ Ta=25 degC  
Derate Above 25 deg C  
Storage Temperature  
PTA  
500  
4.0  
-65 to +150  
150  
mW  
mW/deg C  
deg C  
deg C  
Tstg  
Tj  
Junction Temperature  
THERMAL RESISTANCE  
Junction to Ambient  
Rth(j-a)  
250  
deg C/W  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
BC556  
>65  
>80  
BC557  
>45  
>50  
BC558  
>30  
>30  
UNITS  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter-Base Voltage  
Collector-Cut off Current  
VCEO  
VCBO  
VEBO  
ICBO  
IC=2mA,IB=0  
IC=100uA.IE=0  
IE=100uA, IC=0 ALL  
VCB=30V, IE=0 ALL  
V
V
V
>5.0  
<15  
nA  
Tj=150 deg C  
<5.0  
VCB=30V, IE=0 ALL  
VCE=80V, VBE=0  
VCE=50V, VBE=0  
VCE=30V, VBE=0  
uA  
nA  
nA  
nA  
ICES  
ICES  
<15  
-
-
-
<15  
-
-
-
<15  
TJ=125 deg C  
Collector-Cut off Current  
VCE=80V, VBE=0  
VCE=50V, VBE=0  
VCE=30V, VBE=0  
<4.0  
-
-
-
-
-
uA  
uA  
uA  
<4.0  
<4.0  

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