5秒后页面跳转
BC556TFR PDF预览

BC556TFR

更新时间: 2024-02-23 09:15:21
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
3页 72K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC556TFR 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.37Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):110
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC556TFR 数据手册

 浏览型号BC556TFR的Datasheet PDF文件第2页浏览型号BC556TFR的Datasheet PDF文件第3页 
PNP EPITAXIAL  
BC556/557/558/559/560  
SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER  
· HIGH VOLTAGE: BC556, VCEO= -65V  
· LOW NOISE: BC559, BC560  
TO-92  
· Complement to BC546 ... BC 550  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
VCBO  
Rating  
Unit  
Collector-Base Capacitance  
: BC556  
-80  
-50  
-30  
V
V
V
: BC557/560  
: BC558/559  
Collector-Emitter Voltage  
: BC556  
VCEO  
-65  
-45  
V
V
: BC557/560  
: BC558/559  
-30  
-5  
-100  
500  
150  
V
V
mA  
mW  
°C  
°C  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VEBO  
IC  
PC  
TJ  
TSTG  
-65 ~ 150  
1. Collector 2. Base 3. Emitter  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
ICBO  
hFE  
VCE (sat)  
Collector Cut-off Current  
DC Current Gain  
Collector Emitter Saturation Voltage  
VCB= -30V, IE=0  
VCE= -5V, IC=2mA  
-15  
800  
-300  
-650  
nA  
110  
IC= -10mA, IB= -0.5mA  
IC= -100mA, IB= -5mA  
IC= -10mA, IB= -0.5mA  
IC= -100mA, IB= -5mA  
VCE= -5V, IC= -2mA  
VCE= -5V, IC= -10mA  
VCE= -5V, IC= -10mA  
-90  
-250  
-700  
-900  
-660  
mV  
mV  
mV  
mV  
mV  
mV  
MHz  
VBE (on)  
VBE (on)  
fT  
Collector Base Saturation Voltage  
Base Emitter On Voltage  
-750  
-800  
-600  
150  
Current Gain Bandwidth Product  
Collector Base Capacitance  
CCBO  
NF  
VCB= -10V, f=1MHz  
VCE= -5V, IC= -200mA  
f=1KHz, RG=2KW  
VCE= -5V, IC= -200mA  
RG=2KW  
6
10  
4
pF  
dB  
dB  
2
1
Noise Figure  
: BC556/557/558  
: BC559/560  
dB  
dB  
1.2  
1.2  
NF  
4
2
: BC559  
: BC560  
f=30~15000MHz  
hFE CLASSIFICATION  
Classification  
A
B
C
hFE  
110-220  
200-450  
420-800  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

与BC556TFR相关器件

型号 品牌 获取价格 描述 数据表
BC556VI ETC

获取价格

TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | TO-92
BC556XBK DIOTEC

获取价格

General Purpose Si-Epitaxial PlanarTransistors
BC556-X-T92-B UTC

获取价格

SWITCHING AND AMPLIFIER APPLICATIONS
BC556-X-T92-K UTC

获取价格

SWITCHING AND AMPLIFIER APPLICATIONS
BC556ZL1 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-226A
BC556ZL1 ONSEMI

获取价格

100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
BC556サ INFINEON

获取价格

PNP SILICON TRANSISTORS
BC557 BOCA

获取价格

PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC557 SEMTECH

获取价格

PNP Silicon Epitaxial Planar Transistor for switching and AF applications
BC557 DIOTEC

获取价格

Si-Epitaxial PlanarTransistors