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BC556ZL1 PDF预览

BC556ZL1

更新时间: 2024-01-08 04:34:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 放大器晶体管
页数 文件大小 规格书
8页 178K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, TO-92, 3 PIN

BC556ZL1 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.6
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP功耗环境最大值:1.5 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):280 MHzVCEsat-Max:0.65 V
Base Number Matches:1

BC556ZL1 数据手册

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Order this document  
by BC556/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
MAXIMUM RATINGS  
1
2
BC  
BC  
557  
BC  
3
556  
–65  
–80  
558  
–30  
–30  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
–45  
–50  
Vdc  
–5.0  
–100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
V
V
V
V
(BR)CEO  
BC556  
BC557  
BC558  
–65  
–45  
–30  
C
B
CollectorBase Breakdown Voltage  
(I = –100 µAdc)  
C
V
(BR)CBO  
BC556  
BC557  
BC558  
–80  
–50  
–30  
EmitterBase Breakdown Voltage  
V
(BR)EBO  
(I = –100 Adc, I = 0)  
BC556  
BC557  
BC558  
–5.0  
–5.0  
–5.0  
E
C
Collector–Emitter Leakage Current  
I
CES  
(V  
CES  
(V  
CES  
= –40 V)  
= –20 V)  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
–2.0  
–2.0  
–2.0  
–100  
–100  
–100  
–4.0  
–4.0  
–4.0  
nA  
(V  
CES  
= –20 V, T = 125°C)  
µA  
A
Motorola, Inc. 1996  

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