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BC556-T PDF预览

BC556-T

更新时间: 2024-11-25 13:05:51
品牌 Logo 应用领域
RECTRON 晶体晶体管
页数 文件大小 规格书
3页 89K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

BC556-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.61
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):75
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):265
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BC556-T 数据手册

 浏览型号BC556-T的Datasheet PDF文件第2页浏览型号BC556-T的Datasheet PDF文件第3页 
BC556,A,B,C  
BC557,A,B,C  
BC558,A,B,C  
PNP Silicon Planar Epitaxial Transistors  
1
2
3
TO-92 SMD Package  
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)  
SYMBOL  
VCEO  
VCES  
VCBO  
VEBO  
IC  
BC556  
BC557  
45  
BC558  
30  
UNITS  
DESCRIPTION  
Collector Emitter Voltage  
Collector Emmitter Voltage  
Collector Base Voltage  
65  
V
V
V
V
80  
50  
30  
80  
50  
5
100  
200  
200  
200  
30  
5
5
Emitter Base Voltage  
Collector Current Continuous  
Peak  
mA  
ICM  
IEM  
IBM  
mA  
mA  
Emitter Current - Peak  
Base Current - Peak  
Total power dissipation up to  
Ptot  
500  
mW  
Tamb = 25 oC  
oC  
Tstg  
Tj  
-55 to +150  
150  
Storge Temperature  
Junction Temperature  
oC  
Thermal Resistance  
From junction to ambient  
oC/W  
Rth(j-a)  
250  
www.rectron.com  
1 of 3  

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