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BC549B PDF预览

BC549B

更新时间: 2024-11-17 22:48:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 90K
描述
Si-Epitaxial PlanarTransistors

BC549B 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-92包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:1.2Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC549B 数据手册

 浏览型号BC549B的Datasheet PDF文件第2页 
BC 546 ... BC 549  
NPN  
General Purpose Transistors  
NPN  
Si-Epitaxial PlanarTransistors  
Power dissipation – Verlustleistung  
500 mW  
Plastic case  
TO-92  
(10D3)  
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped in ammo pack  
Standard Pinning  
Standard Lieferform gegurtet in Ammo-Pack  
1 = C 2 = B 3 = E  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 546  
65 V  
85 V  
80 V  
6 V  
BC 547  
45 V  
50 V  
50 V  
6 V  
500 mW 1)  
100 mA  
200 mA  
200 mA  
200 mA  
150C  
BC 548/549  
30 V  
Collector-Emitter-voltage  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
Peak Coll. current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
Junction temp. – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
B open  
B shorted  
E open  
VCE0  
VCES  
VCB0  
VEB0  
Ptot  
IC  
ICM  
IBM  
- IEM  
Tj  
30 V  
30 V  
5 V  
C open  
TS  
- 65…+ 150C  
Characteristics, Tj = 25C  
Kennwerte, Tj = 25C  
Group A  
Group B  
Group C  
DC current gain – Kollektor-Basis-Stromverhältnis  
VCE = 5 V, IC = 10 A  
VCE = 5 V, IC = 2 mA  
VCE = 5 V, IC = 100 mA  
hFE  
hFE  
hFE  
typ. 90  
110...220  
typ. 120  
typ. 150  
200...450  
typ. 200  
typ. 270  
420...800  
typ.400  
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz  
Small signal current gain – Stromverst.  
Input impedance – Eingangsimpedanz  
Output admittance – Ausgangsleitwert  
hfe  
hie  
hoe  
typ. 220  
1.6...4.5 kꢁ  
18 < 30 S  
typ. 330  
3.2...8.5 kꢁ  
30 < 60 S  
typ. 600  
6...15 kꢁ  
60 < 110 S  
Reverse voltage transfer ratio  
Spannungsrückwirkung  
hre  
typ.1.5 *10-4  
typ. 2 *10-4  
typ. 3 *10-4  
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
6
01.11.2003  

BC549B 替代型号

型号 品牌 替代类型 描述 数据表
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