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BC549BDWP

更新时间: 2024-11-06 14:50:03
品牌 Logo 应用领域
美台 - DIODES 晶体管
页数 文件大小 规格书
1页 49K
描述
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, 0.015 X 0.015 INCH, G1, DIE-2

BC549BDWP 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:UNCASED CHIP, S-XUUC-N2针数:2
Reach Compliance Code:unknown风险等级:5.35
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:S-XUUC-N2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
峰值回流温度(摄氏度):235极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):225 MHz
Base Number Matches:1

BC549BDWP 数据手册

  

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