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BC549B/D PDF预览

BC549B/D

更新时间: 2024-11-03 23:34:43
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Low Noise Transistors

BC549B/D 数据手册

 浏览型号BC549B/D的Datasheet PDF文件第2页浏览型号BC549B/D的Datasheet PDF文件第3页浏览型号BC549B/D的Datasheet PDF文件第4页 
Low Noise Transistors  
NPN Silicon  
BC549B,C  
BC550B,C  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC549  
30  
BC550  
45  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
30  
50  
Vdc  
5.0  
Vdc  
Collector Current — Continuous  
I
C
100  
mAdc  
1
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
COLLECTOR  
1
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
83.3  
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
V
Vdc  
(BR)CEO  
BC549B,C  
BC550B,C  
30  
45  
C
B
Collector–Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
Vdc  
Vdc  
(BR)CBO  
(BR)EBO  
BC549B,C  
BC550B,C  
30  
50  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
5.0  
E
C
Collector Cutoff Current  
(V = 30 V, I = 0)  
I
CBO  
15  
5.0  
nAdc  
µAdc  
CB  
E
(V = 30 V, I = 0, T = +125°C)  
CB  
E
A
Emitter Cutoff Current  
(V = 4.0 Vdc, I = 0)  
I
15  
nAdc  
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 1  
BC549B/D  

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