Datasheet > BC549B/D

BC549B/D

更新时间： 2024-11-17 23:34:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	56K
描述
Low Noise Transistors

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中文翻译

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数据手册

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BC549B/D 数据手册

Low Noise Transistors

NPN Silicon

BC549B,C

BC550B,C

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BC549

BC550

Unit

Vdc

CEO

CBO

EBO

Vdc

5.0

Vdc

Collector Current — Continuous

100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

COLLECTOR

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

BASE

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 10 mAdc, I = 0)

Vdc

(BR)CEO

BC549B,C

BC550B,C

—

Collector–Base Breakdown Voltage

(I = 10 µAdc, I = 0)

Vdc

(BR)CBO

(BR)EBO

BC549B,C

BC550B,C

—

Emitter–Base Breakdown Voltage

(I = 10 mAdc, I = 0)

5.0

—

Collector Cutoff Current

(V = 30 V, I = 0)

CBO

—

5.0

nAdc

µAdc

(V = 30 V, I = 0, T = +125°C)

Emitter Cutoff Current

(V = 4.0 Vdc, I = 0)

—

nAdc

EBO

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

February, 2001 – Rev. 1

BC549B/D

12 3 4

中文翻译

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