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BC549B-AMMO PDF预览

BC549B-AMMO

更新时间: 2024-11-07 04:14:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体管
页数 文件大小 规格书
3页 54K
描述
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal

BC549B-AMMO 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.38
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzVCEsat-Max:0.6 V
Base Number Matches:1

BC549B-AMMO 数据手册

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