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BC549B

更新时间: 2024-11-06 08:49:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 57K
描述
Low Noise Transistors NPN Silicon

BC549B 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknown风险等级:5.54
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz

BC549B 数据手册

 浏览型号BC549B的Datasheet PDF文件第2页浏览型号BC549B的Datasheet PDF文件第3页浏览型号BC549B的Datasheet PDF文件第4页 
Low Noise Transistors  
NPN Silicon  
BC549B,C  
BC550B,C  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC549  
30  
BC550  
45  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
30  
50  
Vdc  
5.0  
Vdc  
Collector Current — Continuous  
I
C
100  
mAdc  
1
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
COLLECTOR  
1
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
83.3  
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
V
Vdc  
(BR)CEO  
BC549B,C  
BC550B,C  
30  
45  
C
B
Collector–Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
Vdc  
Vdc  
(BR)CBO  
(BR)EBO  
BC549B,C  
BC550B,C  
30  
50  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
5.0  
E
C
Collector Cutoff Current  
(V = 30 V, I = 0)  
I
CBO  
15  
5.0  
nAdc  
µAdc  
CB  
E
(V = 30 V, I = 0, T = +125°C)  
CB  
E
A
Emitter Cutoff Current  
(V = 4.0 Vdc, I = 0)  
I
15  
nAdc  
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 1  
BC549B/D  

BC549B 替代型号

型号 品牌 替代类型 描述 数据表
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