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BC549ABU

更新时间: 2024-11-20 13:05:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 57K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

BC549ABU 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, TO-92, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.34Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):110JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

BC549ABU 数据手册

 浏览型号BC549ABU的Datasheet PDF文件第2页浏览型号BC549ABU的Datasheet PDF文件第3页浏览型号BC549ABU的Datasheet PDF文件第4页 
Low Noise Transistors  
NPN Silicon  
BC549B,C  
BC550B,C  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC549  
30  
BC550  
45  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
30  
50  
Vdc  
5.0  
Vdc  
Collector Current — Continuous  
I
C
100  
mAdc  
1
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
COLLECTOR  
1
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
83.3  
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
V
Vdc  
(BR)CEO  
BC549B,C  
BC550B,C  
30  
45  
C
B
Collector–Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
Vdc  
Vdc  
(BR)CBO  
(BR)EBO  
BC549B,C  
BC550B,C  
30  
50  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
5.0  
E
C
Collector Cutoff Current  
(V = 30 V, I = 0)  
I
CBO  
15  
5.0  
nAdc  
µAdc  
CB  
E
(V = 30 V, I = 0, T = +125°C)  
CB  
E
A
Emitter Cutoff Current  
(V = 4.0 Vdc, I = 0)  
I
15  
nAdc  
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 1  
BC549B/D  

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