5秒后页面跳转
BC548BTA PDF预览

BC548BTA

更新时间: 2024-11-06 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关小信号双极晶体管
页数 文件大小 规格书
6页 144K
描述
Transistor NPN Silicon Plastic

BC548BTA 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.83
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC548BTA 数据手册

 浏览型号BC548BTA的Datasheet PDF文件第2页浏览型号BC548BTA的Datasheet PDF文件第3页浏览型号BC548BTA的Datasheet PDF文件第4页浏览型号BC548BTA的Datasheet PDF文件第5页浏览型号BC548BTA的Datasheet PDF文件第6页 
Order this document  
by BC546/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC  
BC  
BC  
546  
547  
548  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
65  
45  
30  
80  
50  
30  
Vdc  
6.0  
100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mA, I = 0)  
BC546  
BC547  
BC548  
V
65  
45  
30  
V
V
V
(BR)CEO  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc)  
C
BC546  
BC547  
BC548  
V
80  
50  
30  
(BR)CBO  
EmitterBase Breakdown Voltage  
BC546  
BC547  
BC548  
V
6.0  
6.0  
6.0  
(BR)EBO  
(I = 10 A, I = 0)  
E
C
Collector Cutoff Current  
I
CES  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
= 70 V, V  
= 50 V, V  
= 35 V, V  
= 0)  
= 0)  
= 0)  
BC546  
BC547  
BC548  
BC546/547/548  
0.2  
0.2  
0.2  
15  
15  
15  
4.0  
nA  
BE  
BE  
BE  
= 30 V, T = 125°C)  
µA  
A
REV 1  
Motorola, Inc. 1996  

BC548BTA 替代型号

型号 品牌 替代类型 描述 数据表
BC549BTA ONSEMI

类似代替

NPN外延硅晶体管
BC546BTA ONSEMI

类似代替

Transistor NPN Silicon Plastic
BC548CTA ONSEMI

类似代替

Transistor NPN Silicon Plastic

与BC548BTA相关器件

型号 品牌 获取价格 描述 数据表
BC548B-TAP VISHAY

获取价格

Transistor
BC548BTAR FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC548BU FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor, 3LD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURA
BC548BU ONSEMI

获取价格

NPN外延硅晶体管
BC548BZL1 MOTOROLA

获取价格

100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC548BZL1 ONSEMI

获取价格

Amplifier Transistors
BC548BZL1G ONSEMI

获取价格

Amplifier Transistors
BC548C WEITRON

获取价格

NPN General Purpose Transistor
BC548C WINNERJOIN

获取价格

TRANSISTOR (NPN)
BC548C CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,