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BC548CTA

更新时间: 2024-11-06 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
6页 144K
描述
Transistor NPN Silicon Plastic

BC548CTA 数据手册

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Order this document  
by BC546/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC  
BC  
BC  
546  
547  
548  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
65  
45  
30  
80  
50  
30  
Vdc  
6.0  
100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 1.0 mA, I = 0)  
BC546  
BC547  
BC548  
V
65  
45  
30  
V
V
V
(BR)CEO  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µAdc)  
C
BC546  
BC547  
BC548  
V
80  
50  
30  
(BR)CBO  
EmitterBase Breakdown Voltage  
BC546  
BC547  
BC548  
V
6.0  
6.0  
6.0  
(BR)EBO  
(I = 10 A, I = 0)  
E
C
Collector Cutoff Current  
I
CES  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
= 70 V, V  
= 50 V, V  
= 35 V, V  
= 0)  
= 0)  
= 0)  
BC546  
BC547  
BC548  
BC546/547/548  
0.2  
0.2  
0.2  
15  
15  
15  
4.0  
nA  
BE  
BE  
BE  
= 30 V, T = 125°C)  
µA  
A
REV 1  
Motorola, Inc. 1996  

BC548CTA 替代型号

型号 品牌 替代类型 描述 数据表
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