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BC548BZL1 PDF预览

BC548BZL1

更新时间: 2024-09-09 22:24:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
6页 95K
描述
Amplifier Transistors

BC548BZL1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.08Is Samacsys:N
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

BC548BZL1 数据手册

 浏览型号BC548BZL1的Datasheet PDF文件第2页浏览型号BC548BZL1的Datasheet PDF文件第3页浏览型号BC548BZL1的Datasheet PDF文件第4页浏览型号BC548BZL1的Datasheet PDF文件第5页浏览型号BC548BZL1的Datasheet PDF文件第6页 
BC546B, BC547A, B, C,  
BC548B, C  
Amplifier Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Package is Available*  
COLLECTOR  
1
2
BASE  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC546  
BC547  
BC548  
65  
45  
30  
MARKING  
DIAGRAM  
Collector-Base Voltage  
Emitter-Base Voltage  
Vdc  
TO−92  
CASE 29  
STYLE 17  
BC546  
BC547  
BC548  
80  
50  
30  
BC  
54xx  
YWWG  
1
6.0  
Vdc  
2
3
Collector Current − Continuous  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
BC54xx = Specific Device Code  
= Year  
WW = Work Week  
Y
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Derate above 25°C  
G
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to  
+150  
°C  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
200  
°C/W  
q
JA  
Junction−to−Ambient  
Thermal Resistance,  
Junction−to−Case  
R
83.3  
°C/W  
q
JC  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 4  
BC546/D  

BC548BZL1 替代型号

型号 品牌 替代类型 描述 数据表
BC548BRL1G ONSEMI

完全替代

Amplifier Transistors NPN Silicon
BC548B ONSEMI

完全替代

Amplifier Transistors(NPN Silicon)
BC548BZL1G ONSEMI

完全替代

Amplifier Transistors

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