5秒后页面跳转
BC546B-TAP PDF预览

BC546B-TAP

更新时间: 2024-09-10 13:00:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
6页 265K
描述
Transistor

BC546B-TAP 技术参数

是否Rohs认证:不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.89
Is Samacsys:N最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):200
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

BC546B-TAP 数据手册

 浏览型号BC546B-TAP的Datasheet PDF文件第2页浏览型号BC546B-TAP的Datasheet PDF文件第3页浏览型号BC546B-TAP的Datasheet PDF文件第4页浏览型号BC546B-TAP的Datasheet PDF文件第5页浏览型号BC546B-TAP的Datasheet PDF文件第6页 
BC546 THRU BC549  
Small Signal Transistors (NPN)  
TO-92  
FEATURES  
NPN Silicon Epitaxial Planar Transistors  
.142 (3.6)  
.181 (4.6)  
These transistors are subdivided into three groups  
A, B and C according to their current gain. The type  
BC546 is available in groups A and B, how-  
ever, the types BC547 and BC548 can be  
supplied in all three groups. The BC549 is a  
low-noise type and available in groups B and  
C. As complementary types, the PNP transis-  
tors BC556 … BC559 are recommended.  
.
.022 (0.55)  
.098 (2.5)  
max  
On special request, these transistors are also  
manufactured in the pin configuration TO-18.  
E
C
MECHANICAL DATA  
Case: TO-92 Plastic Package  
Weight: approx. 0.18 g  
B
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
BC546  
BC547  
V
V
V
80  
50  
30  
V
V
V
CBO  
CBO  
CBO  
BC548, BC549  
BC546  
BC547  
BC548, BC549  
V
CES  
V
CES  
V
CES  
80  
50  
30  
V
V
V
BC546  
BC547  
BC548, BC549  
V
CEO  
V
CEO  
V
CEO  
65  
45  
30  
V
V
V
BC546, BC547  
BC548, BC549  
V
EBO  
V
EBO  
6
5
V
V
Collector Current  
I
I
I
100  
mA  
mA  
mA  
mA  
mW  
°C  
C
Peak Collector Current  
Peak Base Current  
Peak Emitter Current  
200  
CM  
BM  
200  
–I  
P
200  
EM  
Power Dissipation at T  
= 25 °C  
5001)  
150  
amb  
tot  
Junction Temperature  
T
T
j
Storage Temperature Range  
–65 to +150  
°C  
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case  
4/98  

与BC546B-TAP相关器件

型号 品牌 获取价格 描述 数据表
BC546BTAR FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC546BTF FAIRCHILD

获取价格

Switching and Applications
BC546BTF ONSEMI

获取价格

Transistor NPN Silicon Plastic
BC546BTFR FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC546BZL1 ONSEMI

获取价格

Amplifier Transistors
BC546BZL1G ONSEMI

获取价格

Amplifier Transistors NPN Silicon
BC546C MCC

获取价格

NPN Silicon Amplifier Transistor 625mW
BC546C FAIRCHILD

获取价格

Switching and Amplifier
BC546C SECOS

获取价格

Elektronische Bauelemente
BC546C WEITRON

获取价格

NPN General Purpose Transistor