BC546CTA

更新时间： 2024-09-10 13:05:51

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BC546CTA 数据手册

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by BC546/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

546

547

548

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

Vdc

6.0

100

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 1.0 mA, I = 0)

BC546

BC547

BC548

—

(BR)CEO

Collector–Base Breakdown Voltage

(I = 100 µAdc)

BC546

BC547

BC548

—

(BR)CBO

Emitter–Base Breakdown Voltage

BC546

BC547

BC548

6.0

—

(BR)EBO

(I = 10 A, I = 0)

Collector Cutoff Current

CES

= 70 V, V

= 50 V, V

= 35 V, V

= 0)

BC546

BC547

BC548

BC546/547/548

—

0.2

—

4.0

= 30 V, T = 125°C)

µA

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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BC546CTA 替代型号

型号	品牌	替代类型	描述	数据表
BC546CTA	FAIRCHILD	类似代替	NPN Epitaxial Silicon Transistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/A

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