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BC373 PDF预览

BC373

更新时间: 2024-11-06 22:39:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管高压
页数 文件大小 规格书
4页 111K
描述
High Voltage Darlington Transistors(NPN Silicon)

BC373 数据手册

 浏览型号BC373的Datasheet PDF文件第2页浏览型号BC373的Datasheet PDF文件第3页浏览型号BC373的Datasheet PDF文件第4页 
Order this document  
by BC372/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR 3  
BASE  
2
1
2
3
EMITTER 1  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BC372 BC373  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
100  
100  
80  
80  
CES  
CBO  
EBO  
V
V
12  
Collector Current — Continuous  
I
C
1.0  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 100 Adc, I = 0)  
BC372  
BC373  
100  
80  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
V
Vdc  
BC372  
BC373  
100  
80  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
12  
Vdc  
E
C
Collector Cutoff Current  
I
nAdc  
CBO  
(V  
CB  
(V  
CB  
= 80 Vdc, I = 0)  
BC372  
BC373  
100  
100  
E
= 60 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = 10 V, I = 0)  
I
100  
nAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.  
Motorola, Inc. 1996  

BC373 替代型号

型号 品牌 替代类型 描述 数据表
BC373G ONSEMI

完全替代

High Voltage Darlington Transistors
BC373RL1G ONSEMI

完全替代

High Voltage Darlington Transistors

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BC373-16 ETC

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TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-92
BC373-25 ETC

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TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-92
BC373G ONSEMI

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High Voltage Darlington Transistors
BC373RL ONSEMI

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1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
BC373RL MOTOROLA

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Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92
BC373RL1 ONSEMI

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High Voltage Darlington Transistors
BC373RL1 MOTOROLA

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1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC373RL1G ONSEMI

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High Voltage Darlington Transistors
BC373RLRA ONSEMI

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1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
BC373RLRA MOTOROLA

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1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92