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BC373G PDF预览

BC373G

更新时间: 2024-11-27 04:08:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管高压
页数 文件大小 规格书
4页 54K
描述
High Voltage Darlington Transistors

BC373G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.47最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):8000JEDEC-95代码:TO-226AA
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BC373G 数据手册

 浏览型号BC373G的Datasheet PDF文件第2页浏览型号BC373G的Datasheet PDF文件第3页浏览型号BC373G的Datasheet PDF文件第4页 
BC372, BC373  
High Voltage  
Darlington Transistors  
NPN Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
COLLECTOR 3  
BASE  
2
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
Vdc  
CEO  
EMITTER 1  
BC372  
BC373  
100  
80  
CollectorBase Voltage  
V
V
Vdc  
CES  
MARKING  
DIAGRAM  
BC372  
BC373  
100  
80  
Emitter−Base Voltage  
12  
Vdc  
Adc  
EBO  
Collector Current − Continuous  
I
1.0  
C
BC  
37x  
Total Power Dissipation @ T = 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
TO−92  
CASE 29  
STYLE 1  
Derate above T = 25°C  
AYWW G  
A
1
G
2
Total Power Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
A
D
3
Derate above T = 25°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
BC37x = Device Code  
x = 2 or 3  
THERMAL CHARACTERISTICS  
Characteristic  
A
= Assembly Location  
Symbol  
Max  
Unit  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Ambient  
R
200  
°C/W  
q
JA  
JC  
Thermal Resistance, Junction−to−Case  
R
q
83.3  
°C/W  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BC372  
TO−92  
5000 Units / Bulk  
5000 Units / Bulk  
BC372G  
TO−92  
(Pb−Free)  
BC373  
TO−92  
5000 Units / Bulk  
5000 Units / Bulk  
BC373G  
TO−92  
(Pb−Free)  
BC373RL1  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
BC373RL1G  
TO−92  
(Pb−Free)  
BC373ZL1  
TO−92  
2000 / Ammo Pack  
2000 / Ammo Pack  
BC373ZL1G  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
BC372/D  

BC373G 替代型号

型号 品牌 替代类型 描述 数据表
BC373ZL1 ONSEMI

完全替代

High Voltage Darlington Transistors
BC373RL1 ONSEMI

完全替代

High Voltage Darlington Transistors
BC373 ONSEMI

完全替代

High Voltage Darlington Transistors(NPN Silicon)

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