Datasheet > BC368-10

BC368-10

更新时间： 2024-11-19 23:34:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	62K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| TO-92

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数据手册

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BC368-10 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

BC368

TO-92

BCE

Transistor in TO-92 Plastic Package Intended for Low Voltage, High Current LF

Applications, Suitable for Class-B Audio Output Stages up to 3W

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VCES

VCEO

VEBO

VALUE

UNIT

Collector -Emitter Voltage

Emitter- Base Voltage

Collector- Current

5.0

1.0

Collector- Current Peak Value

Base- Current

Base- Current Peak Value

Power Dissipation @ Ta=25 deg C

@ Tc=25 deg C

Junction Temperature

Storage Temperature Range

Thermal Resistance

ICM

IBM

PTA

PTC

2.0

100

200

0.8

1.0

150

deg C

Tstg

-65 to +150

Junction to Ambient in Free Air

Junction to Ambient *

Junction to Case

Rth (j-a)

Rth (j-c)

156

125

deg C/W

*Mounted on printed-circuit board , maximum lead length 4mm, mounting

pad for collector lead min 10 mm x10 mm

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut- off Current

ICBO

IE=0, VCB=25V

Tj=150 deg C

IE=0, VCB=25V

VEB=5V, IC=0

IC=5mA, VCE=10V

IC=1A, VCE=1V

1.0

0.7

1.0

0.5

Emitter Cut- off Current

Base- Emitter on Voltage

IEBO

VBE(on)

Collector- Emitter Saturation Voltage

VCE(Sat) IC=1A, IB=100mA

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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BC368J05Z	TI	获取价格	2000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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