Datasheet > BC369

BC369

更新时间： 2024-11-04 22:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	130K
描述
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)

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BC369 数据手册

PNP Silicon AF Transistor

BC 369

● High current gain

● High collector current

● Low collector-emitter saturation voltage

● Complementary type: BC 368 (NPN)

Package¹⁾

Type

Marking

Ordering Code

Pin Configuration

BC 369

–

C62702-C748

TO-92

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

Peak collector current

Base current

100

200

0.8 (1)

150

Peak base current

Total power dissipation, T

Junction temperature

= 90 ˚C²⁾

Ptot

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

Junction - case³⁾

th JA

th JC

≤ 156

≤ 75

K/W

For detailed information see chapter Package Outlines.

If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for

the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.

Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

5.91

Semiconductor Group

12 3 4

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