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BC368-25 PDF预览

BC368-25

更新时间: 2024-11-23 23:34:43
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页数 文件大小 规格书
4页 51K
描述
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92

BC368-25 数据手册

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ON Semiconductort  
BC368  
NPN,  
Amplifier Transistors  
BC369  
PNP  
COLLECTOR  
2
COLLECTOR  
2
3
3
Voltage and current are negative  
for PNP transistors  
BASE  
BASE  
NPN  
PNP  
1
1
EMITTER  
EMITTER  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
20  
25  
1
2
3
V
CES  
EBO  
V
5.0  
1.0  
CASE 29–04, STYLE 14  
TO–92 (TO–226AA)  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
qJA  
qJC  
R
83.3  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2001 – Rev. 3  
BC368/D  

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