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BC369

更新时间: 2024-11-04 22:39:27
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体放大器小信号双极晶体管
页数 文件大小 规格书
4页 133K
描述
Amplifier Transistors

BC369 技术参数

生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.17Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):85
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
功耗环境最大值:1.5 W最大功率耗散 (Abs):0.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):65 MHzVCEsat-Max:0.5 V
Base Number Matches:1

BC369 数据手册

 浏览型号BC369的Datasheet PDF文件第2页浏览型号BC369的Datasheet PDF文件第3页浏览型号BC369的Datasheet PDF文件第4页 
Order this document  
by BC368/D  
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR  
2
COLLECTOR  
2
3
3
BASE  
BASE  
NPN  
PNP  
1
1
Voltage and current are negative  
for PNP transistors  
EMITTER  
EMITTER  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
25  
CES  
EBO  
V
5.0  
1.0  
Collector Current — Continuous  
I
C
1
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
CASE 29–04, STYLE 14  
TO–92 (TO–226AA)  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
V
20  
25  
Vdc  
Vdc  
Vdc  
(BR)CEO  
(I = 10 mA, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 100 µA, I = 0 )  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 100 µA, I = 0)  
V
5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= 25 V, I = 0)  
10  
1.0  
µAdc  
mAdc  
E
= 25 V, I = 0, T = 150°C)  
E
J
Emitter Cutoff Current  
(V = 5.0 V, I = 0)  
I
10  
µAdc  
EBO  
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(V  
CE  
(V  
CE  
(V  
CE  
= 10 V, I = 5.0 mA)  
= 1.0 V, I = 0.5 A)  
= 1.0 V, I = 1.0 A)  
50  
85  
60  
375  
C
C
C
Bandwidth Product (I = 10 mA, V  
CE  
= 5.0 V, f = 20 MHz)  
f
65  
MHz  
V
C
T
Collector–Emitter Saturation Voltage (I = 1.0 A, I = 100 mA)  
V
CE(sat)  
0.5  
1.0  
C
B
Base–Emitter On Voltage (I = 1.0 A, V  
CE  
= 1.0 V)  
V
V
C
BE(on)  
Motorola, Inc. 1996

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