TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC337/BC338 TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
1. COLLECTOR
2.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
50
Unit
3. EMITTER
Collector-Base Voltage
BC337
BC338
V
30
VCEO
Collector-Emitter Voltage BC337
BC338
45
V
25
VEBO
IC
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
5
V
mA
mW
℃
800
625
150
-55-150
PD
Tj
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
VCBO
Test conditions
IC= 100uA, IE=0
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BC337
50
30
V
V
BC338
Collector-emitter breakdown voltage
BC337
IC= 10mA , IB=0
VCEO
45
25
5
V
V
V
BC338
Emitter-base breakdown voltage
VEBO
ICBO
IE= 10uA, IC=0
VCB= 45V, IE=0
Collector cut-off current
BC337
BC338
BC337
BC338
0.1
0.1
0.2
0.2
0.1
630
250
400
630
uA
V
V
V
CB= 25V, IE=0
CE= 40V, IB=0
CE= 20V, IB=0
Collector cut-off current
ICEO
IEBO
uA
uA
Emitter cut-off current
BC337/BC338
VEB= 4 V, IC=0
100
100
160
250
60
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
hFE(1)
VCE=1V, IC= 100mA
DC current gain
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE=1V, IC= 300mA
IC=500mA, IB= 50mA
IC= 500mA, IB=50mA
VCE=1V, IC= 300mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.7
1.2
1.2
V
V
V
V
CE= 5V, IC= 10mA
f = 100MHz
CB=10V,IE=0
f=1MHZ
Transition frequency
f T
210
MHz
pF
V
Collector Output Capacitance
Cob
15
A,May,2011