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BC337-025G PDF预览

BC337-025G

更新时间: 2024-11-25 12:54:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
5页 146K
描述
Amplifier Transistors

BC337-025G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:1 week
风险等级:6.23Is Samacsys:N
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):160
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):210 MHz
Base Number Matches:1

BC337-025G 数据手册

 浏览型号BC337-025G的Datasheet PDF文件第2页浏览型号BC337-025G的Datasheet PDF文件第3页浏览型号BC337-025G的Datasheet PDF文件第4页浏览型号BC337-025G的Datasheet PDF文件第5页 
BC337, BC337-25,  
BC337-40  
Amplifier Transistors  
NPN Silicon  
http://onsemi.com  
Features  
These are PbFree Devices  
COLLECTOR  
1
2
MAXIMUM RATINGS  
BASE  
Rating  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
V
CEO  
CBO  
3
EMITTER  
V
50  
Vdc  
V
EBO  
5.0  
Vdc  
Collector Current Continuous  
I
C
800  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
TO92  
CASE 29  
STYLE 17  
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
1
1
2
2
3
3
THERMAL CHARACTERISTICS  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
R
q
JC  
83.3  
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BC33  
7xx  
AYWW G  
G
BC337xx = Device Code  
(Refer to page 4)  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 Rev. 7  
BC337/D  

BC337-025G 替代型号

型号 品牌 替代类型 描述 数据表
BC337-25ZL1 ONSEMI

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Amplifier Transistors
BC337-25RL1G ONSEMI

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BC337-25ZL1G ONSEMI

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Amplifier Transistors NPN Silicon

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