Datasheet > BC337_00

BC337_00

更新时间： 2024-11-25 12:50:07

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	343K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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数据手册

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BC337_00 数据手册

SEMICONDUCTOR

BC337

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

High Current : I_C=800mA.

DC Current Gain : h_FE=100 630 (V_CE=1V, I_c=100mA).

For Complementary with PNP type BC327.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.45

14.00 +0.50

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

0.55 MAX

2.30

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

0.45 MAX

1.00

1. COLLECTOR

2. BASE

Collector Current

800

3. EMITTER

I_E

Emitter Current

-800

625

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

TO-92

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

h_FE

TEST CONDITION

MIN.

TYP.

MAX.

100

630

0.7

1.2

UNIT

V_CB=45V, I_E=0

V_CE=1V, I_C=100mA

I_C=500mA, I_B=50mA

V_CE=1V, I_C=300mA

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

100

V_CE(sat)

V_BE(ON)

f_T

V_CE=5V, I_C=10mA, f=100MHz

V_CB=10V, f=1MHz, I_E=0

Transition Frequency

100

MHz

C_ob

Collector Output Capacitance

Note : h_FEClassification none:100 630, 16:100 250, 25:160 400, 40:250 630

2000. 2. 28

Revision No : 2

1/2

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