Datasheet > BC337.25

BC337.25

更新时间： 2024-11-25 12:52:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关放大器晶体管 PC
页数	文件大小	规格书
3页	33K
描述
Switching and Amplifier Applications

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中文翻译

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数据手册

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BC337.25 数据手册

BC337/338

Switching and Amplifier Applications

•

Suitable for AF-Driver stages and low power output stages

Complement to BC327/BC328

TO-92

1. Collector 2. Base 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

: BC337

: BC338

Collector-Emitter Voltage

CES

CEO

EBO

: BC337

: BC338

Emitter-Base Voltage

800

°C

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

625

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

I =10mA, I =0

CEO

CES

EBO

: BC337

: BC338

Collector-Emitter Breakdown Voltage

I =0.1mA, V =0

C BE

: BC337

: BC338

Emitter-Base Breakdown Voltage

I =0.1mA, I =0

Collector Cut-off Current

: BC337

CES

=45V, I =0

=25V, I =0

100

: BC338

DC Current Gain

=1V, I =100mA

100

630

FE1

FE2

=1V, I =300mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base Emitter On Voltage

I =500mA, I =50mA

0.7

1.2

=1V, I =300mA

Current Gain Bandwidth Product

Output Capacitance

=5V, I =10mA, f=50MHz

100

MHz

=10V, I =0, f=1MHz

Classification

100 ~ 250

60-

160 ~ 400

100-

250 ~ 630

170-

FE1

FE2

Rev. A2, August 2002

12 3

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与BC337.25相关器件

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