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BC337-16 PDF预览

BC337-16

更新时间: 2024-11-04 06:41:35
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 121K
描述
NPN Plastic-Encapsulate Transistors

BC337-16 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.01
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:0.625 W最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):210 MHz
VCEsat-Max:0.7 VBase Number Matches:1

BC337-16 数据手册

 浏览型号BC337-16的Datasheet PDF文件第2页浏览型号BC337-16的Datasheet PDF文件第3页 
M C C  
BC337-16/25/40  
BC338-16/25/40  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
NPN  
Plastic-Encapsulate  
Transistors  
xꢀ Capable of 0.625Watts of Power Dissipation.  
xꢀ Collector-current 0.8A  
xꢀ Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338)  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
TO-92  
xꢀ Operating temperature : -55к to +150к  
xꢀ Storage temperature : -55к to +150к  
A
E
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
B
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
---  
Vdc  
BC337  
BC338  
45  
25  
V(BR)CBO  
Collector-Base Breakdown Voltage  
(IC=100µAdc, IE=0)  
---  
---  
Vdc  
C
BC337  
BC338  
50  
30  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IE=10µAdc, IC=0)  
5.0  
Vdc  
Collector Cutoff Current  
(VCB=45Vdc,IE=0)  
(VCB=25Vdc,IE=0)  
µAdc  
BC337  
BC338  
---  
---  
0.1  
0.1  
2
1
3
ICEO  
Collector Cutoff Current  
(VCE=40Vdc,IB=0)  
(VCE=20Vdc,IB=0)  
µAdc  
µAdc  
BC337  
BC338  
---  
---  
---  
0.2  
0.2  
0.1  
D
IEBO  
Emitter Cutoff Current  
(VEB=4.0Vdc, IC=0)  
1.COLLECTOR  
2.BASE  
ON CHARACTERISTICS  
hFE(2)  
VCE(sat)  
VBE(sat)  
DC Current Gain  
(IC=300mAdc, VCE=1.0Vdc)  
60  
---  
---  
0.7  
1.2  
--  
3.EMITTER  
Collector-Emitter Saturation Voltage  
(IC=500mAdc, IB=50mAdc)  
Vdc  
Vdc  
G
Base-Emitter Saturation Voltage  
(IC=500mAdc,IB=50mAdc)  
---  
DIMENSIONS  
MM  
SMALL SIGNAL CHARACTERISTICS  
fT  
Current-Gain-Bandwidth Product  
(VCE=5.0V, f=100MHz, IC=10mA)  
210  
---  
MHz  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
DIM  
A
B
C
D
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
hFE CLASSIFICATION  
Classification  
hFE(1)  
16  
25  
40  
100~250  
A 011  
160~400  
B 011  
250~630  
C 011  
E
G
Marking Code  
www.mccsemi.com  
1 of 3  
Revision: 4  
2006/05/18  

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