Datasheet > BC337_09

BC337_09

更新时间： 2024-11-25 08:49:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
5页	138K
描述
Amplifier Transistors

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数据手册

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BC337_09 数据手册

BC337, BC337-25,

BC337-40

Amplifier Transistors

NPN Silicon

http://onsemi.com

Features

• These are Pb−Free Devices

COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EMITTER

Vdc

EBO

5.0

Vdc

Collector Current − Continuous

800

mAdc

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

TO−92

CASE 29

STYLE 17

Total Device Dissipation @ T = 25°C

1.5

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

83.3

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

BC33

7−xx

AYWW G

BC337−xx = Device Code

(Refer to page 4)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

June, 2009 − Rev. 7

BC337/D

12 3 4 5

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