Datasheet > BC337-16-B0B1G

BC337-16-B0B1G

更新时间： 2024-02-05 20:59:06

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	275K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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BC337-16-B0B1G 数据手册

BC337-16/25/40 thru BC338-16/25/40

Taiwan Semiconductor

Small Signal Product

NPN Transistor

FEATURES

- For switching and AF amplifier applications

- These types are subdivided into three groups -16, -25 and -40, according to their current gain

- Moisture sensitivity level 1

- Driver transistor

- Pb free and RoHS complian

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

MECHANICAL DATA

- Case: TO-92 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 190 mg (approximately)

TO-92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_TOT

UNIT

Total Power dissipation

Collector-Base Voltage

625

BC337

BC338

BC337

BC338

BC337

BC338

V_CBO

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

Collector Current

I_C

I_CM

800

°C

Peak Collector Current

1000

Junction and Storage Temperature Range

T_J, T_STG

-55 to +150

PARAMETER

MIN

MAX

SYMBOL

UNIT

BC337

Collector-Base Breakdown Voltage

BC338

I_C= 100μA

I_C= 2mA

V_(BR)CBO

BC337

Collector-Emitter Breakdown Voltage

BC338

V_(BR)CEO

V_(BR)EBO

I_CBO

BC337

Emitter-Base Breakdown Voltage

BC338

I_E= 100μA

BC337

BC338

V_CB=50V

V_CB=30V

100

0.7

1.2

Collector Base Cutoff Current

I_C=500mA, I_B=50mA

V_CE=1V, I_C=300mA

Collector Emitter Saturation Voltage

Base Emitter On Voltage

V_CE(sat)

V_BE(on)

V_CE=5V, I_C=10mA,

f=50MHz

Transition Frequency

Output Capacitance

f_T

100

MHz

V_CB=10V, f=1MHz

C_ob

Current Gain Group: -16

100

160

250

400

630

V_CE= 5V,

I_C= 100mA

-25

-40

h_FE

DC Current Gain

V_CE= 5V,

I_C= 300mA

Version: B14

Document Number: DS_S1407004

12 3 4 5

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