5秒后页面跳转
BAV301 PDF预览

BAV301

更新时间: 2024-11-04 22:39:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
5页 63K
描述
Silicon Epitaxial Planar Diodes

BAV301 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.7
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:1 A
元件数量:1最高工作温度:175 °C
最大输出电流:0.25 A最大重复峰值反向电压:120 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Silver (Sn97.5Ag2.5)

BAV301 数据手册

 浏览型号BAV301的Datasheet PDF文件第2页浏览型号BAV301的Datasheet PDF文件第3页浏览型号BAV301的Datasheet PDF文件第4页浏览型号BAV301的Datasheet PDF文件第5页 
BAV300...BAV303  
Vishay Telefunken  
Silicon Epitaxial Planar Diodes  
Features  
Saving space  
Hermetic sealed parts  
Fits onto SOD 323 / SOT 23 footprints  
Electrical data identical with the devices  
BAV100...BAV103 / BAV200...BAV203  
96 12315  
Applications  
General purposes  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
60  
120  
200  
250  
50  
100  
150  
200  
Unit  
V
V
V
V
V
V
V
V
BAV300  
BAV301  
BAV302  
BAV303  
BAV300  
BAV301  
BAV302  
BAV303  
V
RRM  
V
RRM  
V
RRM  
V
RRM  
Reverse voltage  
V
R
V
R
V
R
V
R
Forward current  
I
250  
1
625  
175  
mA  
A
mA  
C
F
Peak forward surge current  
Forward peak current  
Junction temperature  
Storage temperature range  
t =1s, T =25 C  
f=50Hz  
I
FSM  
p
j
I
FM  
T
T
stg  
j
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
mounted on epoxy–glass hard tissue, Fig. 1  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
2
35 m copper clad, 0.9 mm copper area per  
electrode  
Document Number 85545  
Rev. 3, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

与BAV301相关器件

型号 品牌 获取价格 描述 数据表
BAV301_09 PANJIT

获取价格

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES
BAV301-GS08 VISHAY

获取价格

DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Di
BAV301-GS18 VISHAY

获取价格

DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Di
BAV301P MCC

获取价格

DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, MICROMELF-2, Signal Diode
BAV301-T MCC

获取价格

Rectifier Diode,
BAV301-TP MCC

获取价格

Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, HERMETIC SEALED, MICROMELF-2
BAV301TR VISHAY

获取价格

SIGNAL DIODE, GLASS, MICROMELF-2
BAV301-TR VISHAY

获取价格

Small Signal Switching Diodes, High Voltage
BAV301TR3 VISHAY

获取价格

Rectifier Diode, GLASS, MICROMELF-2
BAV301-TR3 VISHAY

获取价格

Small Signal Switching Diodes, High Voltage