Datasheet > BAV19WS-T1

BAV19WS-T1

更新时间： 2024-11-18 20:24:19

品牌	Logo	应用领域
WTE		光电二极管
页数	文件大小	规格书
3页	44K
描述
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2

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BAV19WS-T1 数据手册

WTE

POWER SEMICONDUCTORS

BAV19WS – BAV21WS

SURFACE MOUNT FAST SWITCHING DIODE

Features

High Conductance

Fast Switching Speed

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose Switching Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-323

Dim

Min

2.30

1.75

1.15

0.25

0.05

0.70

0.30

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

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Mechanical Data

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: BAV19WS A8

BAV20WS A80

All Dimensions in mm

BAV21WS A82

Maximum Ratings ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

BAV19WS

BAV20WS

BAV21WS

Unit

Non-Repetitive Peak Reverse Voltage

V^RM

120

200

250

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

150

200

140

RMS Reverse Voltage

V^R(RMS)

105

400

200

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

I^F

I^O

Non-Repetitive Peak Forward Surge Current

@ t = 1.0µs

@ t = 1.0s

2.5

0.5

I^FSM

Power Dissipation

P^d

200

625

K/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

-65 to +150

Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

BAV19WS

BAV20WS

BAV21WS

Unit

Forward Voltage Drop

@ I^F= 100mA

V^FM

I^RM

C^j

1.0

100

5.0

Peak Reverse Leakage Current @ Rated DC Blocking Voltage

Typical Junction Capacitance (V^R= 0V DC, f = 1.0MHz)

Reverse Recovery Time (Note 2)

t^rr

Note: 1. Valid provided that terminals are kept at ambient temperature.

2. Measured with I^F= I^R= 30mA, I^RR= 0.1 x I^R, R^L= 100ꢀ.

BAV19WS – BAV21WS

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