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BAV19WS-T1-LF PDF预览

BAV19WS-T1-LF

更新时间: 2024-11-18 21:22:03
品牌 Logo 应用领域
WTE 光电二极管
页数 文件大小 规格书
4页 63K
描述
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

BAV19WS-T1-LF 数据手册

 浏览型号BAV19WS-T1-LF的Datasheet PDF文件第2页浏览型号BAV19WS-T1-LF的Datasheet PDF文件第3页浏览型号BAV19WS-T1-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
BAV19WS – BAV21WS  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
High Conductance  
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
For General Purpose Switching Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
A
SOD-323  
Dim  
A
Min  
2.30  
1.60  
1.15  
0.25  
0.09  
0.20  
0.80  
Max  
2.75  
1.80  
1.35  
0.40  
0.18  
0.40  
1.00  
0.12  
C
B
D
C
B
D
E
E
G
H
Mechanical Data  
H
Case: SOD-323, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
G
J
J
All Dimensions in mm  
Polarity: Cathode Band  
Weight: 0.004 grams (approx.)  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
BAV19WS  
BAV20WS  
BAV21WS  
Unit  
Non-Repetitive Peak Reverse Voltage  
VRM  
120  
200  
250  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
100  
70  
150  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
105  
400  
200  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
IF  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0µs  
@ t = 1.0s  
2.5  
0.5  
IFSM  
A
Power Dissipation  
Pd  
200  
625  
mW  
K/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RθJA  
Tj, TSTG  
-65 to +150  
BAV19WS – BAV21WS  
1 of 4  
© 2006 Won-Top Electronics  

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