Datasheet > BAV19W-V_12

BAV19W-V_12

更新时间： 2024-11-18 12:24:35

品牌	Logo	应用领域
威世 - VISHAY		小信号开关二极管高压
页数	文件大小	规格书
5页	94K
描述
Small Signal Switching Diodes, High Voltage

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数据手册

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BAV19W-V_12 数据手册

BAV19W-V, BAV20W-V, BAV21W-V

www.vishay.com

Vishay Semiconductors

Small Signal Switching Diodes, High Voltage

FEATURES

• Silicon epitaxial planar diodes

• For general purpose

• These diodes are also available in other case

styles including: the DO-35 case with the type

designations BAV19 to BAV21, the MiniMELF

case with the type designations BAV100 to

BAV103, the SOT-23 case with the type

designations BAS19 to BAS21, and the SOD-323 case

with type designations BAV19WS-V to BAV21WS-V

MECHANICAL DATA

• AEC-Q101 qualified

Case: SOD-123

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Weight: approx. 10.3 mg

Packaging codes/options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/3K per 7" reel (8 m tape), 15K/box

PARTS TABLE

TYPE

DIFFERENTIATION

TYPE

MARKING

INTERNAL

CONSTRUCTION

PART

ORDERING CODE

REMARKS

BAV19W-V

BAV20W-V

BAV21W-V

V_R= 100 V

_R= 150 V

V_R= 200 V

BAV19W-V-GS18 or BAV19W-V-GS08

BAV20W-V-GS18 or BAV20W-V-GS08

BAV21W-V-GS18 or BAV21W-V-GS08

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

100

UNIT

BAV19W-V

BAV20W-V

BAV21W-V

BAV19W-V

BAV20W-V

BAV21W-V

V_R

Continuous reverse voltage

V_R

150

V_R

200

V_RRM

I_F

120

Repetitive peak reverse voltage

DC Forward current ⁽¹⁾

200

250

Rectified current (average) half wave

I_F(AV)

200

rectification with resist. load ⁽¹⁾

Repetitive peak forward current ⁽¹⁾

Surge forward current

Power dissipation ⁽¹⁾

f  50Hz,  = 180°

t < 1 s, T_j= 25 °C

I_FRM

I_FSM

P_tot

625

410

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

375

UNIT

°C/W

°C

Thermal resistance junction to ambient air ⁽¹⁾

Junction temperature ⁽¹⁾

150

Storage temperature range ⁽¹⁾

T_stg

- 65 to + 150

°C

Note

(1)

Valid provided that leads are kept at ambient temperature

Rev. 1.4, 06-Nov-12

Document Number: 85725

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与BAV19W-V_12相关器件

型号	品牌	获取价格	描述	数据表
BAV19W-V-G	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAV19W-V-G_12	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAV19W-V-GS08	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAV19W-V-GS18	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAV19X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon,
BAV19X	BL Galaxy Electrical	获取价格	0.2A,100V,Small Signal Switching Diode
BAV20	EIC	获取价格	SWITCHING DIODES
BAV20	SYNSEMI	获取价格	SWITCHING DIODES
BAV20	SEMTECH	获取价格	SILICON EPITAXIAL PLANAR DIODES
BAV20	FCI	获取价格	250 mA AXIAL FAST SWITCHING DIODES

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