Datasheet > BAV20

BAV20

更新时间： 2024-11-22 18:04:47

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	85K
描述
Reverse Voltage Vr : 150 V;Forward Current Io : 250 mA;Max Surge Current : 1.0 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 0.1 uA;Recovery Time : 50 ns;Package / Case : DO-35;Mounting Style : Through Hole;Notes : IFSM@t = 1.0us

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中文翻译

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数据手册

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BAV20 数据手册

BAV17

THRU

BAV21

SMALL SIGNAL SWITCHING DIODE

FEATURES

Silicon epitaxial planar diode

DO-35 Package,glass case

High speed switching diode

500 mW power dissipation

DO-35

Polarity: Color band denotes cathode

(

)

.022 0.6

DIA.

(

.018 0.46

(

)

1.083 27.5

TYP.

(

)

.150 3.8

MAX.

(

)

.087 2.2

DIA.

MAX.

(

)

1.083 27.5

TYP.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

UNITS

BAV17

BAV18

BAV19

100

BAV20

150

200

BAV21

200

250

Reverse voltage

Peak reverse voltage

Average forw ard rectified current

Half w ave rectification w ith resist.load

V_R

120

V_RM

I_(AV)

250¹⁾

T =

and f 50Hz

Forw ard surge current @ t<1s and T =

1.0

K/W

I_FSM

P_tot

R_θJA

T_J

500¹⁾

350

Pow er dissipation

@ T_A=25

Thermal resistance junction to ambient

Junction temperature

Storage temperature range

175

-55 --- +175

T_STG

1)Valid prov ided that leads at a distance of 8 mm from case are kept at ambient temperature.

ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

1.0

UNITS

Forw ard voltage

I_F=100mA

@T_j=25

@T_j=100

@ V =V =0 f=1MH_Z

F R

V_F

I_R

100

Leakage current

μA

at reverse voltage

1.5

Capacitance

Reverse recovery time

from I_F=30mA to I_R=30mA

from I_RR=3mA, R_L=100Ω.

C_J

t_rr

1)Valid prov ided that leads at a distance of 8 mm from case are kept at ambient temperature.

2019-04/08

REV:O

ꢀ

12 3 4 5

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