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BAV19WSTR PDF预览

BAV19WSTR

更新时间: 2024-11-18 22:04:15
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描述
DIODE GEN PURP 100V 200MA SOD323

BAV19WSTR 数据手册

 浏览型号BAV19WSTR的Datasheet PDF文件第2页浏览型号BAV19WSTR的Datasheet PDF文件第3页浏览型号BAV19WSTR的Datasheet PDF文件第4页 
BAV19WS- BAV21WS  
Technical Data  
Data Sheet N0590, Rev. B  
BAV19WS-BAV21WS SWITCHING DIODE  
Features  
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic  
Insertion  
For General Purpose Switching Applications  
High Conductance  
This is a Halogen Free Device  
“-A” is an AEC-Q101 qualified device  
All SMC parts are traceable to the wafer lot  
Additional testing can be offered upon request  
SOD-323  
Schematic & Pin Configuration  
Mechanical Characteristics  
Case: SOD-323, Molded plastic  
Terminals: Plated leads solderable per MIL-STD-202,  
Method 208  
Maximum Ratings@TA=25°C unless otherwise specified  
Characteristic  
Marking Code  
Symbol  
BAV19WS BAV20WS BAV21WS  
Unit  
A8  
T2  
T3  
Non-Repetitive Peak Reverse Voltage  
VRM  
120  
200  
250  
V
V
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
100  
71  
150  
200  
141  
RMS Reverse Voltage  
VR(RMS)  
IO  
106  
200  
400  
mA  
mA  
Average Rectified Output Current  
Forward continuous current  
IFM  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
IFSM  
A
rated load (JEDEC Method)  
@t=1.0ms  
@ t=1.0s  
2.5  
0.5  
Power Dissipation  
Pd  
250  
625  
500  
mW  
mA  
IFRM  
RθJA  
Repetitive Peak Forward Current  
Typical Thermal Resistance Junction to Ambient  
Junction Temperature Range  
°C/W  
150  
°C  
°C  
TJ  
Storage Temperature Range  
TSTG  
-55 to +150  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   

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