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BAT54S(Z) PDF预览

BAT54S(Z)

更新时间: 2024-11-01 20:56:43
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 95K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, SOT-23, 3 PIN

BAT54S(Z) 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.05
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.33 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

BAT54S(Z) 数据手册

 浏览型号BAT54S(Z)的Datasheet PDF文件第2页 
OBSOLETE - PLEASE USE BAT54S  
SOT23 SILICON EPITAXIAL  
BAT54 SERIES  
SCHOTTKY BARRIER DIODES  
ISSUE 1– SEPTEMBER 1995  
1
1
1
1
2
1
3
3
2
3
3
2
2
3
BAT54  
BAT54A  
BAT54S  
SERIES  
BAT54C  
Device Type  
SINGLE  
COMMON  
ANODE  
COMMON  
CATHODE  
Pin Configuration  
L4Z  
L42  
L44  
L43  
Partmarking Detail  
FEATURES: Low VF & High Current Capability  
APPLICATIONS: PSU, Mobile Telecomms & SCSI  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
30  
UNIT  
V
Continuous Reverse Voltage  
Forward Current  
VR  
IF  
200  
mA  
mV  
mA  
mA  
mW  
°C  
Forward Voltage @ IF =10mA  
Repetitive Peak Forward Current  
Non Repetitive Forward Current t<1s  
Power Dissipation at Tamb=25°C  
Storage Temperature Range  
VF  
400  
IFRM  
IFSM  
Ptot  
Tstg  
Tj  
300  
600  
330  
-55 to +150  
125  
JunctionTemperature  
¤
°C  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
MIN. TYP. MAX. UNIT CONDITIONS.  
Reverse Breakdown V(BR)R  
Voltage  
30  
50  
V
IR=10µA  
Forward Voltage  
VF  
135  
200  
280  
350  
530  
240  
320  
400  
500  
mV  
mV  
mV  
mV  
IF=0.1mA  
IF=1mA  
IF=10mA  
IF=30mA  
IF=100mA  
1000 mV  
Reverse Current  
IR  
2.5  
7.5  
4
VR=25V  
µA  
pF  
ns  
Diode Capacitance  
CD  
trr  
10  
5
f=1MHz,VR=1V  
Reverse Recover  
Time  
switched from  
IF=10mA to IR=10mA  
RL=100, Measured  
at IR=1mA  
¤ Dual Device; For simultaneous continuous use Tj=100°C.  
3 - 4  

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