Datasheet > BAT54A-M0RFG

BAT54A-M0RFG

更新时间： 2024-11-22 01:02:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	156K
描述
230mW SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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BAT54A-M0RFG 数据手册

BAT54 / A / C / S

Taiwan Semiconductor

Small Signal Product

230mW SMD Schottky Barrier Diode

FEATURES

- Fast switching speed

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

SOT-23

MECHANICAL DATA

- Case: Bend lead SOT-23 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Polarity: Indicated by cathode band

- Weight: 8 ± 0.5 mg

- Marking Code: KL1,KL2,KL3,KL4

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

Peak Pepetitive Peak Reverse Voltage

VALUE

SYMBOL

V_RRM

V_RWM

V_R

UNIT

Working Peak Reverse Voltage

DC Reverse Voltage

Forward Continuous Current

I_F

200

300

I_FRM

Repetitive Peak Forward current (tp≤1S;δ≤0.5)

Forward Surge Current

Power Dissipation

@ t<1.0s

I_FSM

600

200

°C/W

°C

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature

R_θJA

500

T_j, T_STG

-55 to 125

PARAMETER

MIN

MAX

SYMBOL

UNIT

I_R=100µA

I_F=0.1mA

Reverse Breakdown Voltage

V_(BR)

0.24

0.32

0.40

0.50

1.00

2.0

I_F=1mA

I_F=10mA

V_F

Forward Voltage

I_F=30mA

I_F=100mA

V_R=25V

Reverse Current

Total Capacitance

I_R

C_T

t_rr

µA

V_R=1V, f=1.0MHz

I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

Reverse Recovery Time

Version: E14

Document Number: DS_S1404001

12 3 4 5

中文翻译

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