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BAT54AT

更新时间: 2024-11-20 23:16:19
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
2页 178K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAT54AT 数据手册

 浏览型号BAT54AT的Datasheet PDF文件第2页 
BAT54T /AT /CT /ST  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
Ultra-Small Surface Mount Package  
Low Forward Voltage Drop  
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
SOT-523  
A
Dim Min Max Typ  
C
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
B
TOP VIEW  
E
Mechanical Data  
B
¾
¾
0.50  
G
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
·
·
·
·
Case: SOT-523, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
H
K
M
N
K
L
J
L
D
·
·
·
·
Polarity: See Diagrams Below  
M
N
a
Marking: See Diagrams Below & Page 2  
Weight: 0.002 grams (approx.)  
Ordering Information, see Page 2  
0°  
8°  
¾
All Dimensions in mm  
BAT54T Marking: L1  
BAT54AT Marking: L2  
BAT54CT Marking: L3  
BAT54ST Marking: L4  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
IFM  
IFRM  
IFSM  
Pd  
200  
300  
mA  
mA  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current  
Forward Surge Current  
600  
mA  
@ t < 1.0s  
Power Dissipation (Note 1)  
150  
mW  
°C/W  
°C  
R
qJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
833  
Tj, TSTG  
-65 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
¾
Max  
Unit  
Test Condition  
V(BR)R  
30  
Reverse Breakdown Voltage (Note 2)  
IR = 100mA  
¾
V
IF = 0.1mA  
240  
320  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
400  
mV  
Forward Voltage (Note 2)  
¾
¾
VF  
500  
1000  
VR = 25V  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
¾
¾
¾
2.0  
10  
mA  
VR = 1.0V, f = 1.0MHz  
CT  
¾
pF  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100W  
trr  
Reverse Recovery Time  
¾
¾
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30259 Rev. 3 - 2  
1 of 2  
BAT54T /AT /CT /ST  

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