Datasheet > BAT54AT

BAT54AT

更新时间： 2024-11-21 08:48:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管开关
页数	文件大小	规格书
2页	296K
描述
SWITCHING DIODE

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中文翻译

获取价格

数据手册

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BAT54AT 数据手册

BAT54T/AT/CT/ST

SOT-523

SWITCHING DIODE

FEATURES

Low Forward Voltage Drop

Fast Switching

Maximum Ratings @T_A=25℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

DC Blocking Voltage

V_RM

V_R

Average Rectified Output Current

Power Dissipation

I_O

200

150

℃

T_J

Junction temperature

125

Storage temperature range

T_STG

-65-125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

I_R= 100μA

V_R=25V

Reverse voltage

leakage current

I_F=0.1mA

I_F=1mA

240

320

Forward

voltage

V_F

I_F=10mA

I_F=30mA

I_F=100mA

400

500

1000

Total

capacitance

C_T

t _{r r}

V_R=1V,f=1MHz

I_F=I_R=10mA,

Reverse recovery time

I_rr=0.1xI_R,R_L=100Ω

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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