BAT42

更新时间： 2024-01-21 06:01:18

品牌	Logo	应用领域
RECTRON		整流二极管肖特基二极管局域网
页数	文件大小	规格书
2页	119K
描述
SILICON PLANAR SCHOTTKY DIODES

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中文翻译

获取价格

技术参数
数据手册

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BAT42 技术参数

类别：	二极管	配置：	Single
VRRM (V) max：	30	IF (A) max：	0.1
VF (V) max：	1	Condition1_IF (A)：	0.2
IFSM (A) max：	4	IR (uA) max：	0.5
Condition2_VR (V)：	25	trr (ns) max：	5
AEC Qualified：	No	最高工作温度：	125
最低工作温度：	-55	MSL等级：	1
生命周期：	Active	是否无铅：	Yes
符合Reach：	Yes	符合RoHS：	Yes
ECCN代码：	EAR99	Package Outlines：	SOD-523

BAT42 数据手册

BAT42

SILICON PLANAR SCHOTTKY DIODES

FEATURES

Fast Switching Device(T_RR<4.0nS)

DO-35 Package (JEDEC)

Through-Hole Device Type Mounting

Hermetically Sealed Glass

DO-35

Compression Bonded Construction

All external surfaces are corrosion resistant and leads

are readily solderable

(

)

.022 0.56

DIA.

(

)

.018 0.46

(

)

1.02 26.0

MIN.

(

)

.165 4.2

MAX.

(

)

.079 2.0

DIA.

MAX.

(

)

1.02 26.0

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )

SYMBOL

BAT42

UNITS

RATINGS

Maximum Forward Comtinuous Reverse Voltage

Maximum Forward Comtinuous Current @ T =25^OC

200

mAmps

Maximum Peak Forward Current @tp<1s,d<0.5

500

mAmps

FRM

FSM

Surge Forward Current @ tp<10ms

Amps

Maximum Power Dissipation @ T =65^OC

200

^OC

Junction Temperature

125

Storage Temperature Range

-65 to + 150

STG

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS SYMBOL

MIN.

TYP.

MAX.

UNITS

Reverse breakdown voltage (I =100µA)

(BR)R

Reverse voltage leakage current (V =25V,T =25^OC)

0.5

µA

(V =25V,T =100^OC)

100

(I =10mA)

0.40

0.65

1.0

Forward voltage Pulse Tesx tp<300µs,δ<2% (I =50mA)

(I =200mA)

Diode capacitance (V =1,f=1MHz)

7.0

Reveres recovery time (I =I =10mA,I =1mA,R =100Ω)

2006-3

中文翻译

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